Home Hot keywords

Search Modes

搜尋結果

J. Baliga, Semiconductor International (June 1998, p. 139.
The first 300 copies of Fundamentals of Power Semiconductor Devices ... mentary (p-channel) IGBT structure. ... B. Jayant Baliga is internationally recognized for his leadership in the area of ... In December 1998, he received the J.J. Ebers.
1,114 頁·59 MB
Several semiconductor manufacturers have demonstrated recently that the ... Solids 187, 1 (1995); J. Baliga, Semiconductor International (June 1998), p. 139.
The first 300 copies of Fundamentals of Power Semiconductor Devices ... mentary (p-channel) IGBT structure. ... B. Jayant Baliga is internationally recognized for his leadership in the area of ... In December 1998, he received the J.J. Ebers.
The physical and chemical properties of wide-band-gap semiconductors make these materials an ideal choice for ...
The physical and chemical properties of wide bandgap semiconductors silicon ... high quality diamond and that only p-type (acceptor ... tic wave filters [69, 139] and electro-mechanical micro ... HITEC 1998, 4th International (1998), pp. 88–92.
“SEMICONDUCTOR DEVICES: Physics and Technology”, S. M. Sze, John ... F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Ovren, International. Workshop ... 133-139, June, (2000); ... B. J. Baliga, IEEE Transactons On Electron Devices, Vol.
[99ART015] : J.-P. HAUTIER, "Functional description and working out ... Proceedings of the 5th International PCI '82 Conference, pp 347-359, 28-30 september 1982. ... on Power Semiconductor Devices & ICs ISPSD 98, pp 5-10, june 1998. [99ART048] : B.J. BALIGA, "Trends in power semiconductor devices", IEEE Trans.
Safa Kasap, Peter Capper — 2006Science
32,299 (1955) Y. M. Tariov, V. F. Tsvetkov: J. Cryst. ... Electronics Conference, HITEC1998, 4th International, 14-18 June 1998, pp. ... 19, 71–73 (1998) L. Zheng , R.P. Joshi: J. Appl. Phys. ... 36, 1811–1823 (1989) B.J. Baliga:J. Appl. Phys.
由 P Van Zant 著作2004被引用 764 次 — Chapter 2. Properties of Semiconductor Materials and Chemicals ... Objectives. 139. Yield Measurement Points. 140. Accumulative Wafer-Fabrication Yield ... June 2003.) ... J. Baliga, Ed., Semiconductor International, January 1998, p. 15. 10.
40 頁·607 KB
B. Jayant Baliga2015Technology & Engineering
[9] B.J. Baliga, Gate Enhanced Rectifier (GERECT). GE Patent Disclosure Letter RD13,112, September 29, 1980. ... et al., Comparison of N and P channel IGBTs, in: IEEE International Electron Devices ...

google search trends