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SiC defect PhD-thesis
由 Z Zolnai 著作2005被引用 13 次 — The first part of the thesis reports on magnetic properties and thermal stability of vacancy- and antisite-related defects in 4H-SiC investigated.
PDF | On Jan 1, 2005, Zsolt ZOLNAI published Irradiation-induced crystal defects in silicon carbide Ph.D. Thesis | Find, read and cite all the research you ...
2015年5月19日 — 2015 (English)Doctoral thesis, comprehensive summary (Other academic). Abstract [en]. Silicon Carbide (SiC) has long been considered a ...
由 R Nagy 著作2019 — Titel: Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications. Erscheinungsdatum: 2019. Dokumentart: Dissertation.
由 R Nagy 著作2019 — I, Roland Nagy, declare that this thesis titled, “Silicon Vacancy Defects in 4H-Silicon Car- bide Semiconductor for Quantum Applications” ...
由 R Rurali 著作被引用 2 次 — The EU that financed my PhD through ATOMCAD, a Research, Training and Mobility Network. ... 10.1 The DБ and DББ defects in SiC .
缺少字詞: thesis ‎| 必須包含以下字詞: thesis
Irradiation-induced crystal defects in silicon carbide Ph.D. Thesis. ... of irradiation-induced point defect centers in 4H-SiC…………………………..364.1 Annealing ...
由 JP Cottom 著作2017被引用 2 次 — Thesis submitted for the degree of Engineering Doctorate (EngD) by ... Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study",.
227 頁·10 MB
In this thesis defects in SiC pn-junctions and in SiC MOSFETs ... In 2013 Jon Cottom started a PhD thesis on density functional theory.
由 DJ Christle 著作2016 — This dissertation is centered around using atom-sized point defects in solid ... cancy defects in silicon carbide performed in Chapter 6 of this thesis.
167 頁·5 MB

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