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SiC enlarge
作者:V Jokubavicius被引用次数:45 — A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral enlargement of ...
2021年2月4日 — The availability of large high-quality silicon carbide (SiC) single crystals is a key issue in the development of the full potential of ...
We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid.
作者:S Lin2010被引用次数:4 — A technique for diameter enlargement in SiC crystal growth. Shenghuang Lin, Zhiming Chen, Dong Jiang, Peng Liang, Jun Wan, ...
作者:V Jokubavicius2014被引用次数:45 — We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer ...
作者:T Kato2011被引用次数:3 — In this study, we suggest the effective enlargement method of (0001) 4H-SiC bulk crystals grown by the sublimation method using long length growth technique ...
作者:W Bahng2000被引用次数:3 — Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid. 842. Article Preview. Article Preview ...
SIC EXPAND. [SIC\]SIC EXPAND InFileName OutFileName Add the language name before each command of the macro file InFileName and write the results into the new ...
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2018年11月27日 — The value of other materials is starting to increase as the demand rises. One example is silicon carbide (SiC), which – in contrast to ...

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